DSO-TC4 is a multifunctional transistor oscilloscope launched by FNIRSI, which is comprehensive and practical, and is designed for the maintenance and R&D industries. It integrates an oscilloscope, a signal generator, and a transistor.

The main features of the product are:

Oscilloscope functions:

Sampling rate: 48MSa/s
Analog bandwidth: 10MHz
Voltage protection: ±400V
Waveform storage: supports screenshot saving and viewing, which is convenient for data analysis

Signal generator function:

Supports 13 waveform outputs, frequency range 0-50KHz, output voltage adjustable 0-3v.
Output parameters (frequency, amplitude, duty cycle) are adjustable, flexible to meet various needs

Transistor function:

High efficiency: Automatically identify the type and pin arrangement of the tested component, simplify the operation process, and improve test efficiency
Diverse categories: Detect and analyze the performance and characteristics of semiconductor components such as transistors, diodes, triodes, field effect (FET), etc

Portable design:

Equipped with a 2.8-inch TFT color screen, the picture is clear and intuitive
Built-in high-capacity rechargeable lithium battery (1500mAh), standby time 4 hours
Small and light, suitable for mobile use.

Specifications

Main Parameters

Brand : FNIRSI : Model : DSO-TC4
Screen : 2.8-inch TFT Color Screen : Backlight : Brightness Adjustable
Power Supply : TYPE-C（5V/1A） : Battery : 3.7V/1500mAh
Languages : 中文、English、Deutsch、Português、にほんご、Español、한국인、Pyccкий : Size : ≈90x142x27.5mm
Product Weight : ≈186g

Oscilloscope Parameters

Real-Time Sampling Rate : 48MSa/s : Analog Bandwidth : 10MHz
Input Impedance : 1MΩ : Coupling Mode : AC/DC
Test Voltage Range : 1:1 Probe: 80Vpp (+40V)
10:1 Probe: 800Vpp (+400V) : Vertical Sensitivity : 10mV/div~10V/div (X1 range)
Vertical Displacement : Adjustable with indication : Time Base Range : 50ns~20s
Trigger Mode : Auto/Normal/Single : Trigger Type : Rising edge, Falling edge
Trigger Level : Adjustable with indication : Waveform Freeze : Yes (HOLD function)
Automatic Measurement : Max, Min, Avg, RMS, Vpp, Frequency, Cycle, Duty Cycle

Component Testing

Transistor : Amplification factor "hfe"; Base-Emitter voltage "Ube", Ic/Ie, Collector-Emitter reverse leakage current "Iceo", Ices, Forward voltage drop of protection diode "Uf" : Diode : Forward voltage drop <5V (Forward voltage drop, Junction capacitance, Reverse leakage current)
Zener Diode : 0.01~32V

Reverse Breakdown Voltage (K-A-A Test Area) : Field-Effect Transistor (FET)
JFET: Gate capacitance "Cg", Drain current Id under "Vgs", Forward voltage drop of protection diode "Uf"
IGBT: Drain current Id under Vgs, Forward voltage drop of protection diode Uf
MIOSTET: Threshold voltage "Vt", Gate capacitance "Cg", Drain-Source resistance "Rds", Forward voltage drop of protection diode "Uf"

Unidirectional SCR : Trigger voltage <5V, Gate level (Gate voltage) : Bidirectional SCR : Trigger current <6mA (Gate voltage)
Capacitor : 25pF~100mF, Capacitance value, Loss factor "Vloss" : Resistor : 0.01Ω~50MΩ
Inductor : 10μH~1000μH, DC resistance : DS18B20 : Temperature sensor, Pins: GND, DQ, VDD
DHT11 : Temperature and humidity sensor, Pins: VDD, DATA, GND