TIP122 Epitaxial Planar NPN Transistors are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. In an epitaxial transistor operating in saturation, charge is stored not only in the active and passive base regions but also in the region bounded between the collector junction and n-n+ interface. The saturation operation of a transistor switch is characterized by a single most fundamental parameter, the saturation time constant, which may be related to the intrinsic physical structure of the transistor.

• Low collector-emitter saturation voltage
• Complementary NPN - PNP transistors
• High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A.
• High Collector Breakdown Voltage : VCEO=100V(Min.)